Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios
Aspect ratio, doping, nanowires, zinc selenide, zinc telluride
We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.
Tsinghua University Press
Joanne W. L. Yim,Deirdre Chen,Gregory F. Brown,Junqiao Wu, Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios. NanoRes.2009, 2: 931-937