Article Title

Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios

Authors

Joanne W. L. Yim, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Deirdre Chen, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA
Gregory F. Brown, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Junqiao Wu, Department of Materials Science and Engineering, University of California, Berkeley, CA 94720, USA Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Keywords

Aspect ratio, doping, nanowires, zinc selenide, zinc telluride

Abstract

We report synthesis windows for growth of millimeter-long ZnTe nanoribbons and ZnSe nanowires using vapor transport. By tuning the local conditions at the growth substrate, high aspect ratio nanostructures can be synthesized. A Cu-ion immersion doping method was applied, producing strongly p-type conduction in ZnTe and ionic conduction in ZnSe. These extreme aspect ratio wide-bandgap semiconductors have great potential for high density nanostructured optoelectronic circuits.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-009-9095-7

Publisher

Tsinghua University Press

Recommended Citation

Joanne W. L. Yim,Deirdre Chen,Gregory F. Brown,Junqiao Wu, Synthesis and Ex situ doping of ZnTe and ZnSe nanostructures with extreme aspect ratios. NanoRes.2009, 2: 931-937