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Nano Research

Article Title

Carrier mobility tuning of MoS2 by strain engineering in CVD growth process

Authors

Yongfeng Chen, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Wenjie Deng, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Xiaoqing Chen, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, ChinaFollow
Yi Wu, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Jianwei Shi, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
Jingying Zheng, Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
Feihong Chu, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Beiyun Liu, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Boxing An, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Congya You, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, China
Liying Jiao, Key Laboratory of Organic Optoelectronics and Molecular Engineering of the Ministry of Education, Department of Chemistry, Tsinghua University, Beijing 100084, China
Xinfeng Liu, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China
Yongzhe Zhang, College of Materials Science and Engineering, Key Laboratory of Advanced Functional Materials of Education Ministry of China, Beijing Key Laboratory of Microstructure and Property of Advanced Materials, Beijing University of Technology, Beijing 100124, ChinaFollow

Keywords

MoS2, CVD, carrier mobility, strain engineering, 2D materials

Abstract

Strain engineering is proposed to be an effective technology to tune the properties of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Conventional strain engineering techniques (e.g., mechanical bending, heating) cannot conserve strain due to their dependence on external action, which thereby limits the application in electronics. In addition, the theoretically predicted strain-induced tuning of electrical performance of TMDCs has not been experimentally proved yet. Here, a facile but effective approach is proposed to retain and tune the biaxial tensile strain in monolayer MoS2 by adjusting the process of the chemical vapor deposition (CVD). To prove the feasibility of this method, the strain formation model of CVD grown MoS2 is proposed which is supported by the calculated strain dependence of band gap via the density functional theory (DFT). Next, the electrical properties tuning of strained monolayer MoS2 is demonstrated in experiment, where the carrier mobility of MoS2 was increased by two orders (~ 0.15 to ~ 23 cm2·V-1·s-1). The proposed pathway of strain preservation and regulation will open up the optics application of strain engineering and the fabrication of high performance electronic devices in 2D materials.

Publisher

Tsinghua University Press

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