Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions
transition metal dichalcogenides, two-dimensional materials, physical unclonable function, metal-organic chemical vapor deposition, field-effect transistor
Physically unclonable crypto primitives have potential applications for anti-counterfeiting, identification, and authentication, which are clone proof and resistant to variously physical attack. Conventional physical unclonable function (PUF) based on Si complementary metal-oxide-semiconductor (CMOS) technologies greatly suffers from entropy loss and bit instability due to noise sensitivity. Here we grow atomically thick MoS2 thin film and fabricate field-effect transistors (FETs). The inherently physical randomness of MoS2 transistors from materials growth and device fabrication process makes it appropriate for the application of PUF device. We perform electrical characterizations of MoS2 FETs, collect the data from 448 devices, and generate PUF keys by splitting drain current at specific levels to evaluate the response performance. Proper selection of splitting threshold enables to generate binary, ternary, and double binary keys. The generated PUF keys exhibit good randomness and uniqueness, providing a possibility for harvesting highly secured PUF devices with two-dimensional materials.
Tsinghua University Press
Bangjie Shao, Tsz Hin Choy, Feichi Zhou, Jiewei Chen, Cong Wang, Yong Ju Park, Jong-Hyun Ahn, Yang Chai. Crypto primitive of MOCVD MoS2 transistors for highly secured physical unclonable functions. Nano Research 2021, 14(6): 1784-1788.