Robust transport of charge carriers in in-plane 1Tʹ-2H MoTe2 homojunctions with ohmic contact
1T′-2H MoTe2 homojunction, ohmic contact, surface potential, built-in potential
Metal-semiconductor ohmic contacts are required to reduce the energy dissipation for two-dimensional (2D) electronic devices, and phase engineering of 2D transition-metal dichalcogenides (TMDCs) is a promising approach for building ohmic contacts. Here, 2D in-plane 1T′-2H MoTe2 homojunctions were prepared by direct epitaxy via vapor deposition. The interface properties of in-plane 1T′-2H MoTe2 homojunction were investigated in detail by combining experiments, calculations and theories. The ohmic contact properties of 1T′-2H MoTe2 homojunction were proved according to Kelvin force probe microscopy and density functional theory calculations. The charge carriers robust transport in in-plane 1T′-2H MoTe2 homojunction without Fermi-level pinning can be well described by Poisson equation and band alignment. These results indicate that phase engineering of 2D TMDCs is promising to construct ohmic contacts for device applications.
Tsinghua University Press
Donglin Lu, Zhenqing Li, Congsheng Xu, Siwei Luo, Chaoyu He, Jun Li, Gang Guo, Guolin Hao, Xiang Qi, Jianxin Zhong. Robust transport of charge carriers in in-plane 1Tʹ-2H MoTe2 homojunctions with ohmic contact. Nano Research 2021, 14(5): 1311-1318.