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Nano Research

Article Title

Modify Cd

Authors

Yongxu Yan, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;
Wenhao Ran, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;
Zhexin Li, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;
Linlin Li, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;
Zheng Lou, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;
Guozhen Shen, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, , Beijing, 100083, China;; Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China;

Keywords

near-infrared photodetector, Cd, nanowires, core-shell structure, self-powered

Abstract

Cd3As2 nanowires (NWs) have great potential in the near-infrared (NIR) photodetection field due to their excellent optoelectronic properties as a typical Dirac semimetal. However, the existence of surface oxidization limits their photoresponse performance for practical applications. Here, we modified the surface of Cd3As2 NWs with sulfur to prevent surface oxidizing and optimize the bandgap structure to improve the photoresponse performance. The S-modified Cd3As2 samples existed as core/shell Cd3As2/CdS NWs and the corresponding single NW device showed a responsivity of 0.95 A/W in the NIR band at a 0 V bias, which is three orders of magnitude higher than that of an unmodified NW. This study provides an efficient and universally applicable way to prevent semimetals nanostructures from oxidizing and promote their optoelectronic properties.

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