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Nano Research

Article Title

Direct bandgap engineering with local biaxial strain in few-layer MoS2 bubbles

Authors

Yang Guo, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China
Bin Li, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics (CAS), University of Science and Technology of China, Hefei 230026, China
Yuan Huang, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Shuo Du, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China
Chi Sun, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China
Hailan Luo, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Baoli Liu, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, China
Xingjiang Zhou, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Jinlong Yang, Hefei National Laboratory for Physical Sciences at the Microscale and Synergetic Innovation Center of Quantum Information & Quantum Physics (CAS), University of Science and Technology of China, Hefei 230026, China
Junjie Li, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, China
Changzhi Gu, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China School of Physical Sciences, CAS Key Laboratory of Vacuum Physics, University of Chinese Academy of Sciences, Beijing 100190, China

Keywords

2D layered materials, transition metal dichalcogenides, band engineering, local strain

Abstract

Strain engineering provides an important strategy to modulate the optical and electrical properties of semiconductors for improving devices performance with mechanical force or thermal expansion difference. Here, we present the investigation of the local strain distribution over few-layer MoS2 bubbles, by using scanning photoluminescence and Raman spectroscopies. We observe the obvious direct bandgap emissions with strain in the few-layer MoS2 bubble and the strain-induced continuous energy shifts of both resonant excitons and vibrational modes from the edge of the MoS2 bubble to the center (10 m scale), associated with the oscillations resulted from the optical interference-induced temperature distribution. To understand these results, we perform ab initio simulations to calculate the electronic and vibrational properties of few-layer MoS2 with biaxial tensile strain, based on density functional theory, finding good agreement with the experimental results. Our study suggests that local strain offers a convenient way to continuously tune the physical properties of a few-layer transition metal dichalcogenides (TMDs) semiconductor, and opens up new possibilities for band engineering within the 2D plane.

Graphical Abstract

Publisher

Tsinghua University Press

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