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Nano Research

Article Title

Understanding the role of interface in advanced semiconductor nanostructure and its interplay with wave function overlap

Authors

Chenyuan Cai, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Yunhao Zhao, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Faran Chang, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Xuebing Zhao, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Liting Yang, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Chongyun Liang, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Guowei Wang, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Zhichuan Niu, State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Yi Shi, National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xianhu Liu, Key Laboratory of Materials Processing and Mold (Zhengzhou University), Ministry of Education, Zhengzhou University, Zhengzhou 450002, China
Yuesheng Li, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China
Renchao Che, Laboratory of Advanced Materials, Department of Materials Science, Collaborative Innovation Center of Chemistry for Energy Materials, Fudan University, Shanghai 200438, China

Keywords

interface engineering, energy band alignment, charge distribution, strain distribution, semiconductor multilayer nanostructures

Abstract

As the proportion of interfaces increases rapidly in nanomaterials, properties and quality of interfaces hugely impact the performance of advanced semiconductors. Here, the effect of interfaces is explored by comparatively studying two InAs/AlSb superlattices with and without the thin InAsSb layers inserted inside each InAs layers. Through strain mapping, it indicates that the addition of interfaces leads to an increase of local strain both near interfaces and inside layers. Meantime, owing to the creation of hole potential wells within the original electron wells, the charge distribution undergoes an extra electron-hole alternating arrangement in the structure with inserted layers than the uninserted counterpart. Such a feature is verified to enhance electron-hole wave function overlap by theoretical simulations, which is a must for better optical performance. Furthermore, with an elaborate design of the inserted layers, the wave function overlap could be boosted without sacrificing other key device performances.

Graphical Abstract

Publisher

Tsinghua University Press

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