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Nano Research

Article Title

InSe/hBN/graphite heterostructure for high-performance 2D electronics and flexible electronics

Authors

Liangmei Wu, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Jinan Shi, University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Zhang Zhou, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Jiahao Yan, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Aiwei Wang, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Ce Bian, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Jiajun Ma, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Ruisong Ma, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Hongtao Liu, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Jiancui Chen, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Yuan Huang, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China
Wu Zhou, University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China
Lihong Bao, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, China
Min Ouyang, Department of Physics, University of Maryland, MD 20742, USA
Sokrates T. Pantelides, Department of Physics and Astronomy and Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, Tennessee 37235, USA
Hong-Jun Gao, Institute of Physics, Chinese Academy of Sciences, P. O. Box 603, Beijing 100190, China University of Chinese Academy of Sciences & CAS Center for Excellence in Topological Quantum Computation, Chinese Academy of Sciences, PO Box 603, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, China

Keywords

InSe, van der Waals heterostruture, 2D electronics, flexible electronics

Abstract

Two-dimensional (2D) materials as channel materials provide a promising alternative route for future electronics and flexible electronics, but the device performance is affected by the quality of interface between the 2D-material channel and the gate dielectric. Here we demonstrate an indium selenide (InSe)/hexagonal boron nitride (hBN)/graphite heterostructure as a 2D field-effect transistor (FET), with InSe as channel material, hBN as dielectric, and graphite as gate. The fabricated FETs feature high electron mobility up to 1,146 cm2·V−1·s−1 at room temperature and on/off ratio up to 1010 due to the atomically flat gate dielectric. Integrated digital inverters based on InSe/hBN/graphite heterostructures are constructed by local gating modulation and an ultrahigh voltage gain up to 93.4 is obtained. Taking advantages of the mechanical flexibility of these materials, we integrated the heterostructured InSe FET on a flexible substrate, exhibiting little modification of device performance at a high strain level of up to 2%. Such high-performance heterostructured device configuration based on 2D materials provides a new way for future electronics and flexible electronics.

Graphical Abstract

Publisher

Tsinghua University Press

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