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Nano Research

Article Title

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

Authors

Fangzhou Li, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
SenPo Yip, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China
Ruoting Dong, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
Ziyao Zhou, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China
Changyong Lan, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
Xiaoguang Liang, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
Dapan Li, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
You Meng, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
Xiaolin Kang, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China
Johnny C. Ho, Department of Materials Science and Engineering, City University of Hong Kong, Hong Kong 999077, China Shenzhen Research Institute, City University of Hong Kong, Shenzhen 518057, China State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Hong Kong 999077, China Centre for Functional Photonics, City University of Hong Kong, Hong Kong 999077, China

Keywords

InGaZnO, nanowires, thin-film transistors, superlattice

Abstract

Amorphous indium–gallium–zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn2.4O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.

Graphical Abstract

Publisher

Tsinghua University Press

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