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Nano Research

Article Title

Hybrid dual-channel phototransistor based on 1D t-Se and 2D ReS2 mixed-dimensional heterostructures

Authors

Jingkai Qin, State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Hang Yan, State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Gang Qiu, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
Mengwei Si, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
Peng Miao, School of Chemistry and Chemical Engineering, Harbin Institute of Technology, Harbin 150001, China
Yuqin Duan, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA
Wenzhu Shao, School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Liang Zhen, State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Chengyan Xu, State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China
Peide D Ye, School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, USA

Keywords

van der Waals heterostructures, ReS2, trigonal selenium (t-Se) nanobelt, phototransistor

Abstract

The combination of mixed-dimensional semiconducting materials can provide additional freedom to construct integrated nanoscale electronic and optoelectronic devices with diverse functionalities. In this work, we report a high-performance dual-channel phototransistor based on one-dimensional (1D)/two-dimensional (2D) trigonal selenium (t-Se)/ReS2 heterostructures grown by chemical vapor deposition. The injection and separation efficiency of photogenerated electron–hole pairs can be greatly improved due to the high-quality interfacial contact between t-Se nanobelts and ReS2 films. Compared with bare ReS2 film devices, the dual-channel phototransistor based on t-Se/ReS2 heterostructure exhibits considerable enhancement with the responsivity (R) and detectivity (D*) up to 98 A·W–1 and 6 × 1010 Jones at 400 nm illumination with an intensity of 1.7 mW·cm−2, respectively. Besides, the response time can also be reduced by three times of magnitude to less than 50 ms due to the type-II band alignment at the interface. This study opens up a promising avenue for high-performance photodetectors by constructing mixed-dimensional heterostructures.

Graphical Abstract

Publisher

Tsinghua University Press

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