Doping modulated in-plane anisotropic Raman enhancement on layered ReS2
ReS2, anisotropy, charge transfer, Raman enhancement, electrons doping
Anisotropic two-dimensional (2D) materials exhibit lattice-orientation dependent optical and electrical properties. Carriers doping of such materials has been used to modulate their energy band structures for opto-electronic applications. Herein, we show that by stacking monolayer rhenium disulfide (ReS2) on a flat gold film, the electrons doping in ReS2 can affect the in-plane anisotropic Raman enhancement of molecules adsorbed on ReS2. The change of enhancement factor and the degree of anisotropy in enhancement with layer number are sensitively dependent on the doping level of ReS2 by gold, which is further confirmed by Kelvin probe force microscopy (KPFM) measurements. These findings could open an avenue for probing anisotropic electronic interactions between molecules and 2D materials with low symmetry using Raman enhancement effect.
Tsinghua University Press
Na Zhang,Jingjing Lin,Shuqing Zhang,Shishu Zhang,Xiaobo Li,Dongyan Liu,Hua Xu,Jin Zhang,Lianming Tong, Doping modulated in-plane anisotropic Raman enhancement on layered ReS2. NanoRes.2019, 12(3): 563–568