Article Title

Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS₂ transistors

Authors

Po-Chun Chen, Department of Physics, “National Taiwan Normal University”, Taipei 11677
Chih-Pin Lin, Department of Electronics Engineering and Institute of Electronics, “National Chiao Tung University”, Hsinchu 30010
Chuan-Jie Hong, Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023
Chih-Hao Yang, Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023
Yun-Yan Lin, Department of Physics, “National Taiwan Normal University”, Taipei 11677
Ming-Yang Li, Research Center for Applied Sciences, “Academia Sinica”, Taipei 11529
Lain-Jong Li, Physical Sci. and Eng., King Abdullah University of Sci. and Technology, Thuwal 23955, Kingdom of Saudi Arabia
Tung-Yuan Yu, “National Nano Device Laboratories”, “National Applied Research Laboratories”, Hsinchu 30078
Chun-Jung Su, “National Nano Device Laboratories”, “National Applied Research Laboratories”, Hsinchu 30078
Kai-Shin Li, “National Nano Device Laboratories”, “National Applied Research Laboratories”, Hsinchu 30078
Yuan-Liang Zhong, Department of Physics and Center for Nanotechnology, Chung Yuan Christian University, Chungli 32023
Tuo-Hung Hou, Department of Electronics Engineering and Institute of Electronics, “National Chiao Tung University”, Hsinchu 30010
Yann-Wen Lan, Department of Physics, “National Taiwan Normal University”, Taipei 11677

Keywords

monolayer MoS2 devices, standard wet cleaning, field-effect transistors, N-methyl-2-pyrrolidone

Abstract

Two-dimensional semiconductors, such as MoS2 are known to be highly susceptible to diverse molecular adsorbates on the surface during fabrication, which could adversely affect device performance. To ensure high device yield, uniformity and performance, the semiconductor industry has long employed wet chemical cleaning strategies to remove undesirable surface contaminations, adsorbates, and native oxides from the surface of Si wafers. A similarly effective surface cleaning technique for two-dimensional materials has not yet been fully developed. In this study, we propose a wet chemical cleaning strategy for MoS2 by using N-methyl-2-pyrrolidone. The cleaning process not only preserves the intrinsic properties of monolayer MoS2, but also significantly improves the performance of monolayer MoS2 field-effect-transistors. Superior device on current of 12 μA·μm–1 for a channel length of 400 nm, contact resistance of 15 kΩ·μm, field-effect mobility of 15.5 cm2·V–1·s–1, and the average on–off current ratio of 108 were successfully demonstrated

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-018-2215-5

Publisher

Tsinghua University Press

Recommended Citation

Po-Chun Chen,Chih-Pin Lin,Chuan-Jie Hong,Chih-Hao Yang,Yun-Yan Lin,Ming-Yang Li,Lain-Jong Li,Tung-Yuan Yu,Chun-Jung Su,Kai-Shin Li,Yuan-Liang Zhong,Tuo-Hung Hou,Yann-Wen Lan, Effective N-methyl-2-pyrrolidone wet cleaning for fabricating high-performance monolayer MoS2 transistors. NanoRes.2019, 12(2): 303–308