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Nano Research

Article Title

Magnetic logic inverter from crossed structures of defect-free graphene with large unsaturated room temperature negative magnetoresistance

Authors

Chao Feng, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Junxiang Xiang, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Ping Liu, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Xiangqi Wang, Department of Physics, University of Science and Technology of China, Hefei 230026, China
Jianlin Wang, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China
Guojing Hu, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Meng Huang, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Zhi Wang, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China
Zengming Zhang, The Centre for Physical Experiments, University of Science and Technology of China, Hefei 230026, China
Yuan Liu, School of Physics and Electronics, Hunan University, Changsha 410082, China
Yalin Lu, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, University of Science and Technology of China, Hefei 230026, China
Bin Xiang, Hefei National Research Center for Physical Sciences at the Microscale, Department of Materials Science & Engineering, CAS Key Lab of Materials for Energy Conversion, University of Science and Technology of China, Hefei 230026, China

Keywords

magnetic logic inverter, defect-free graphene, negative magnetoresistance

Abstract

Introducing defects into graphene has been widely utilized to realize the negative magnetoresistance (MR) effect in graphene. However, the reported graphene negative MR exhibits only ~ 10% under 10 T at room temperature to date, which extremely limits the resolution of future spintronics devices. Moreover, intentional defect introduction can also cause unintentional degradation in graphene’s intrinsic properties. In this paper, we report a magnetic logic inverter based on a crossed structure of defect-free graphene, resulting in a substantial gain of 4.81 mV/T while exhibiting room temperature operation. This crossed structure of graphene shows large unsaturated room temperature negative MR with an enhancement of up to 1,000% at 9 T. A transition behavior between negative and positive MR is observed in this crossed structure and the transition temperature can be tuned by a ratio of the conductivity between in-plane and out-of-plane transport. Our results open an intriguing path for future two-dimensional spintronics device applications.

Graphical Abstract

Publisher

Tsinghua University Press

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