MoS2 dual-gate transistors with electrostatically doped contacts
MoS2, dual-gate, tri-gate, field effect transistor, extrinsic resistance, electrostatic doping
Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 × 107 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.
Tsinghua University Press
Fuyou Liao,Yaocheng Sheng,Zhongxun Guo,Hongwei Tang,Yin Wang,Lingyi Zong,Xinyu Chen,Antoine Riaud,Jiahe Zhu,Yufeng Xie,Lin Chen,Hao Zhu,Qingqing Sun,Peng Zhou,Xiangwei Jiang,Jing Wan,Wenzhong Bao,David Wei Zhang, MoS2 dual-gate transistors with electrostatically doped contacts. NanoRes.2019, 12(10): 2515–2519