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Nano Research

Article Title

MoS2 dual-gate transistors with electrostatically doped contacts

Authors

Fuyou Liao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Yaocheng Sheng, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Zhongxun Guo, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Hongwei Tang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Yin Wang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Lingyi Zong, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Xinyu Chen, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Antoine Riaud, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Jiahe Zhu, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China
Yufeng Xie, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Lin Chen, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Hao Zhu, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Qingqing Sun, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Peng Zhou, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
Xiangwei Jiang, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Jing Wan, State Key Laboratory of ASIC and System, School of Information Science and Engineering, Fudan University, Shanghai 200433, China
Wenzhong Bao, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China
David Wei Zhang, State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China

Keywords

MoS2, dual-gate, tri-gate, field effect transistor, extrinsic resistance, electrostatic doping

Abstract

Two-dimensional (2D) transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) have been intensively investigated because of their exclusive physical properties for advanced electronics and optoelectronics. In the present work, we study the MoS2 transistor based on a novel tri-gate device architecture, with dual-gate (Dual-G) in the channel and the buried side-gate (Side-G) for the source/drain regions. All gates can be independently controlled without interference. For a MoS2 sheet with a thickness of 3.6 nm, the Schottky barrier (SB) and non-overlapped channel region can be effectively tuned by electrostatically doping the source/drain regions with Side-G. Thus, the extrinsic resistance can be effectively lowered, and a boost of the ON-state current can be achieved. Meanwhile, the channel control remains efficient under the Dual-G mode, with an ON-OFF current ratio of 3 × 107 and subthreshold swing of 83 mV/decade. The corresponding band diagram is also discussed to illustrate the device operation mechanism. This novel device structure opens up a new way toward fabrication of high-performance devices based on 2D-TMDs.

Graphical Abstract

Publisher

Tsinghua University Press

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