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Nano Research

Article Title

Electron doping induced semiconductor to metal transitions in ZrSe2 layers via copper atomic intercalation

Authors

Zahir Muhammad, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Kejun Mu, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Haifeng Lv, CAS Key Laboratory of Materials for Energy Conservation, Synergetic Innovation Centre of Quantum Information & Quantum Physics, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Chuanqiang Wu, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Zia ur Rehman, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Muhammad Habib, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Zhe Sun, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China
Xiaojun Wu, CAS Key Laboratory of Materials for Energy Conservation, Synergetic Innovation Centre of Quantum Information & Quantum Physics, CAS Center for Excellence in Nanoscience, and Department of Material Science and Engineering, University of Science and Technology of China, Hefei 230026, China
Li Song, National Synchrotron Radiation Laboratory, CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, University of Science and Technology of China, Hefei 230029, China

Keywords

layered materials, phase transition, angle resolved photoemission spectroscopy, electron doping

Abstract

ABSTRACT Atomic intercalation in two-dimensional (2D) layered materials can be used to engineer the electronic structure at the atomic scale and generate tuneable physical and chemical properties which are quite distinct in comparison with the pristine material. Among them, electron-doped engineering induced by intercalation is an efficient route to modulate electronic states in 2D layers. Herein, we demonstrate a semiconducting to metallic phase transition in zirconium diselenide (ZrSe2) single crystals via controllable incorporation of copper (Cu) atoms. Our angle resolved photoemission spectroscopy (ARPES) measurements and first-principles density functional theory (DFT) calculations clearly revealed the emergence of conduction band dispersion at the M/L point of the Brillouin zone due to Cu-induced electron doping in ZrSe2 interlayers. Moreover, electrical measurements in ZrSe2 revealed semiconducting behavior, while the Cu-intercalated ZrSe2 exhibited a linear current–voltage curve with metallic character. The atomic intercalation approach may have high potential for realizing transparent electron-doping systems for many specific 2D-based nanoelectronic applications.

Graphical Abstract

Publisher

Tsinghua University Press

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