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Nano Research

Article Title

Heterostructured graphene quantum dot/WSe2/Si photodetector with suppressed dark current and improved detectivity

Authors

Mengxing Sun, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Qiyi Fang, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100084, China
Dan Xie, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Yilin Sun, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Liu Qian, Department of Chemistry, Tsinghua University, Beijing 100084, China
Jianlong Xu, Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
Peng Xiao, Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou 215123, China
Changjiu Teng, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Weiwei Li, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Tianling Ren, Institute of Microelectronics & Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Yanfeng Zhang, Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100084, China

Keywords

heterojunction, photodetector, Si, WSe2, graphene quantum dots

Abstract

ABSTRACT A high-performance heterojunction photodetector is formed by combining an n-type Si substrate with p-type monolayer WSe2 obtained using physical vapor deposition. The high quality of the WSe2/Si heterojunction is demonstrated by the suppressed dark current of 1 nA and the extremely high rectification ratio of 107. Under illumination, the heterojunction exhibits a wide photoresponse range from ultraviolet to near-infrared radiation. The introduction of graphene quantum dots (GQDs) greatly elevates the photodetective capabilities of the heterojunction with strong light absorption and long carrier lifetimes. The GQDs/WSe2/Si heterojunction exhibits a high responsivity of ~ 707 mA·W–1, short response time of 0.2 ms, and good specific detectivity of ~ 4.51 × 109 Jones. These properties suggest that the GQDs/WSe2/Si heterojunction holds great potential for application in future high- performance photodetectors.

Graphical Abstract

Publisher

Tsinghua University Press

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