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Nano Research

Article Title

High-performance sub-10-nm monolayer black phosphorene tunneling transistors

Authors

Hong Li, College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, China
Jun Tie, College of Mechanical and Material Engineering, North China University of Technology, Beijing 100144, China
Jingzhen Li, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Meng Ye, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Han Zhang, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Xiuying Zhang, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Yuanyuan Pan, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China
Yangyang Wang, Nanophotonics and Optoelectronics Research Center, Qian Xuesen Laboratory of Space Technology, China Academy of Space Technology, Beijing 100094, China
Ruge Quhe, State Key Laboratory of Information Photonics and Optical Communications & School of Science, Beijing University of Posts and Telecommunications, Beijing 100876, China
Feng Pan, School of Advanced Materials, Peking University, Shenzhen Graduate School, Shenzhen 518055, China
Jing Lu, State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, China Collaborative Innovation Center of Quantum Matter, Beijing 100871, China

Keywords

black phosphorene, tunneling field-effect transistor, device performance, ab initio quantum transport simulation

Abstract

ABSTRACT Moore's law is approaching its physical limit. Tunneling field-effect transistors (TFETs) based on 2D materials provide a possible scheme to extend Moore's law down to the sub-10-nm region owing to the electrostatic integrity and absence of dangling bonds in 2D materials. We report an ab initio quantum transport study on the device performance of monolayer (ML) black phosphorene (BP) TFETs in the sub-10-nm scale (6–10 nm). Under the optimal schemes, the ML BP TFETs show excellent device performance along the armchair transport direction. The on-state current, delay time, and power dissipation of the optimal sub-10-nm ML BP TFETs significantly surpass the latest International Technology Roadmap for Semiconductors (ITRS) requirements for high-performance devices. The subthreshold swings are 56–100 mV/dec, which are much lower than those of their Schottky barrier and metal oxide semiconductor field-effect transistor counterparts.

Graphical Abstract

Publisher

Tsinghua University Press

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