Silicon nanowire ratioed inverters on bendable substrates
silicon nanowire, ratioed inverter, n-MOS inverter, p-MOS inverter, bendable substrate
ABSTRACT In this study, we demonstrate the performance of silicon nanowire (SiNW) n-metal oxide semiconductor (MOS) and p-MOS ratioed inverters that are fabricated on bendable substrates. The electrical characteristics of the fabricated devices can be controlled by adjusting the load voltage. The logic swings of the n- and p-MOS ratioed inverters at a low supply voltage of 1 V are 80% and 96%, respectively. The output voltage level of the p-MOS ratioed inverter is close to rail-to-rail operation. The device also exhibits stable characteristics with good fatigue properties. Our bendable SiNW ratioed inverters show promise as a candidate building block for future bendable electronics.
Tsinghua University Press
Jeongje Moon,Yoonjoong Kim,Doohyeok Lim,Kyeungmin Im,Sangsig Kim, Silicon nanowire ratioed inverters on bendable substrates. NanoRes.2018, 11(5): 2586–2591