Nano Research

Article Title

High-mobility air-stable n-type field-effect transistors based on large-area solution-processed organic single-crystal arrays


n-type organic single crystals, submicron ribbon arrays, slope-coating method, air-stable, organic field-effect transistors


ABSTRACT Solution-processed n-type organic semiconductor micro/nanocrystals (OSMCs) are fundamental elements for developing low-cost, large-area, and all organic logic/complementary circuits. However, the development of air-stable, highly aligned n-channel OSMC arrays for realizing high-performance devices lags far behind their p-channel counterparts. Herein, we present a simple one-step slope-coating method for the large-scale, solution-processed fabrication of highly aligned, air-stable, n-channel ribbon-shaped single-crystalline N,N′-bis(2- phenylethyl)-perylene-3,4:9,10-tetracarboxylic diimide (BPE-PTCDI) arrays. The slope and patterned photoresist (PR) stripes on the substrate are found to be crucial for the formation of large-area submicron ribbon arrays. The width and thickness of the BPE-PTCDI submicron ribbons can be finely tuned by controlling the solution concentration as well as the slope angle. The resulting BPE-PTCDI submicron ribbon arrays possess an optimum electron mobility up to 2.67 cm2·V–1·s–1 (with an average mobility of 1.13 cm2·V–1·s–1), which is remarkably higher than that of thin film counterparts and better than the performance reported previously for single-crystalline BPE-PTCDI-based devices. Moreover, the devices exhibit robust air stability and remain stable after exposing in air over 50 days. Our study facilitates the development of air-stable, n-channel organic field-effect transistors (OFETs) and paves the way towards the fabrication of high-performance, organic single crystal-based integrated circuits.

Graphical Abstract


Tsinghua University Press