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Nano Research

Article Title

High-performance multilayer WSe2 field-effect transistors with carrier type control

Authors

Pushpa Raj Pudasaini, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Akinola Oyedele, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA Bredesen Center for Interdisciplinary Research and Graduate Education, University of Tennessee, Knoxville, TN 37996, USA
Cheng Zhang, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Michael G. Stanford, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
Nicholas Cross, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
Anthony T. Wong, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
Anna N. Hoffman, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA
Kai Xiao, Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Gerd Duscher, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
David G. Mandrus, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Thomas Z. Ward, Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
Philip D. Rack, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, USA Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

Keywords

transition metal dichalcogenide, field-effect transistors, carrier control, plasma treatment, carrier mobility

Abstract

ABSTRACT In this study, high-performance multilayer WSe2 field-effect transistor (FET) devices with carrier type control are demonstrated via thickness modulation and a remote oxygen plasma surface treatment. Carrier type control in multilayer WSe2 FET devices with Cr/Au contacts is initially demonstrated by modulating the WSe2 thickness. The carrier type evolves with increasing WSe2 channel thickness, being p-type, ambipolar, and n-type at thicknesses 5 nm, respectively. The thickness-dependent carrier type is attributed to changes in the bandgap of WSe2 as a function of the thickness and the carrier band offsets relative to the metal contacts. Furthermore, we present a strong hole carrier doping effect via remote oxygen plasma treatment. It non-degenerately converts n-type characteristics into p-type and enhances field-effect hole mobility by three orders of magnitude. This work demonstrates progress towards the realization of high-performance multilayer WSe2 FETs with carrier type control, potentially extendable to other transition metal dichalcogenides, for future electronic and optoelectronic applications.

Graphical Abstract

Publisher

Tsinghua University Press

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