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Nano Research

Article Title

Intrinsic excitonic emission and valley Zeeman splitting in epitaxial MS2 (M = Mo and W) monolayers on hexagonal boron nitride

Authors

Chunxiao Cong, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Chenji Zou, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Bingchen Cao, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Lishu Wu, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Jingzhi Shang, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore
Haomin Wang, State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China
Zhijun Qiu, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Laigui Hu, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Pengfei Tian, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Ran Liu, State Key Laboratory of ASIC and System, School of Information Science and Technology, Fudan University, Shanghai 200433, China
Ting Yu, Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore

Keywords

transition metal dichalcogenides, intrinsic excitonic emission, valley Zeeman splitting, hexagonal boron nitride, chemical vapor deposition

Abstract

ABSTRACT Two-dimensional (2D) semiconductors, represented by 2D transition metal dichalcogenides (TMDs), exhibit rich valley physics due to strong spin-orbit/ spin-valley coupling. The most common way to probe such 2D systems is to utilize optical methods, which can monitor light emissions from various excitonic states and further help in understanding the physics behind such phenomena. Therefore, 2D TMDs with good optical quality are in great demand. Here, we report a method to directly grow epitaxial WS2 and MoS2 monolayers on hexagonal boron nitride (hBN) flakes with a high yield and high optical quality; these monolayers show better intrinsic light emission features than exfoliated monolayers from natural crystals. For the first time, the valley Zeeman splitting of WS2 and MoS2 monolayers on hBN has been visualized and systematically investigated. This study paves a new way to produce high optical quality WS2 and MoS2 monolayers and to exploit their intrinsic properties in a multitude of applications.

Graphical Abstract

Publisher

Tsinghua University Press

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