•  
  •  
 
Nano Research

Article Title

Epitaxial growth of large-area and highly crystalline anisotropic ReSe2 atomic layer

Authors

Fangfang Cui, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Xiaobo Li, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Qingliang Feng, Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Jianbo Yin, Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Lin Zhou, Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Dongyan Liu, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Kaiqiang Liu, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an 710119, China
Xuexia He, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Xing Liang, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Shengzhong Liu, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Zhibin Lei, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Zonghuai Liu, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China
Hailin Peng, Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Jin Zhang, Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
Jing Kong, Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
Hua Xu, Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices; Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China

Keywords

rhenium diselenide (ReSe2), epitaxial growth, high crystal quality, anisotropy, optoelectronics

Abstract

ABSTRACT The anisotropic two-dimensional (2D) layered material rhenium disulfide (ReSe2) has attracted considerable attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, because of its low lattice symmetry and interlayer decoupling, anisotropic growth and out-of-plane growth occur easily, yielding thick flakes, dendritic structure, or flower-like structure. In this study, we demonstrated a bottom-up method for the controlled and scalable synthesis of ReSe2 by van der Waals epitaxy. To achieve controllable growth, a micro-reactor with a confined reaction space was constructed by stacking two mica substrates in the chemical vapor deposition system. Within the confined reaction space, the nucleation density and growth rate of ReSe2 were significantly reduced, favoring the large-area synthesis of ReSe2 with a uniform monolayer thickness. The morphological evolution of ReSe2 with growth temperature indicated that the anisotropic growth was suppressed at a low growth temperature (<600 °C). Field-effect transistors employing the grown ReSe2 exhibited p-type conduction with a current ON/OFF ratio up to 105 and a hole carrier mobility of 0.98 cm2/(V·s). Furthermore, the ReSe2 device exhibited an outstanding photoresponse to near-infrared light, with responsivity up to 8.4 and 5.1 A/W for 850- and 940-nm light, respectively. This work not only promotes the large-scale application of ReSe2 in high-performance electronic devices but also clarifies the growth mechanism of low-lattice symmetry 2D materials.

Graphical Abstract

Publisher

Tsinghua University Press

Share

COinS