"Atomic origin of the traps in memristive interface" by Ye Tian, Lida Pan et al.

Article Title

Atomic origin of the traps in memristive interface

Authors

Ye Tian, CAS Center of Excellence for Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China School of Communication and Electronics Engineering, Hunan City University, Yiyang 413000, China Photonics Research Group, Department of Information Technology, Ghent University-IMEC, Ghent B-9000, Belgium
Lida Pan, Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235, USA Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
Chuan Fei Guo, Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen 518055, China
Qian Liu, CAS Center of Excellence for Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, No. 11 Beiyitiao, Zhongguancun, Beijing 100190, China

Keywords

memristance, interface, trap state, first principle calculation

Abstract

ABSTRACT In recent years, trap-related interfacial transport phenomena have received great attention owing to their potential applications in resistive switching devices and photo detectors. Not long ago, one new type of memristive interface that is composed of F-doped SnO2 and Bi2S3 nano-network layers has demonstrated a bivariate-continuous-tunable resistance with a swift response comparable to the one in neuron synapses and with a brain-like memorizing capability. However, the resistive mechanism is still not clearly understood because of lack of evidence, and the limited improvement in the development of the interfacial device. By combining I–V characterization, electron energy-loss spectroscopy, and firstprinciple calculation, we studied in detail the macro/micro features of the memristive interface using experimental and theoretical methods, and confirmed that its atomic origin is attributed to the traps induced by O-doping. This implies that impurity-doping might be an effective strategy for improving switching features and building new interfacial memristors.