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Nano Research

Article Title

Direct discrimination between semiconducting and metallic single-walled carbon nanotubes with high spatial resolution by SEM

Authors

Dongqi Li, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Yang Wei, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Jin Zhang, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Jiangtao Wang, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Yinghong Lin, FEI Company, Building No. 8, No. 399 Shengxia Road, Pudong, Shanghai 201210, China
Peng Liu, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China
Shoushan Fan, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China Collaborative Innovation Center of Quantum Matter, Beijing 100084, China
Kaili Jiang, State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, China Collaborative Innovation Center of Quantum Matter, Beijing 100084, China

Keywords

single-walled carbon nanotube, scanning electron microscopy, surface charging, transistor

Abstract

ABSTRACT Single-walled carbon nanotube (SWCNT) films with a high density exhibit broad functionality and great potential in nanodevices, as SWCNTs can be either metallic or semiconducting in behavior. The films greatly benefit from characterization technologies that can efficiently identify and group SWCNTs based on metallic or semiconducting natures with high spatial resolution. Here, we developed a facile imaging technique using scanning electron microscopy (SEM) to discriminate between semiconducting and metallic SWCNTs based on black and white colors. The average width of the single-SWCNT image was reduced to ~9 nm, ~1/5 of previous imaging results. These achievements were attributed to reduced surface charging on the SiO2/Si substrate under enhanced accelerating voltages. With this identification technique, a CNT transistor with an on/off ratio of >105 was fabricated by identifying and etching out the white metallic SWCNTs. This improved SEM imaging technique can be widely applied in evaluating the selective growth and sorting of SWCNTs.

Graphical Abstract

Publisher

Tsinghua University Press

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