•  
  •  
 
Nano Research

Article Title

A highly sensitive chemical gas detecting transistor based on highly crystalline CVD-grown MoSe2 films

Authors

Jongyeol Baek, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Demin Yin, Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, ON N2L 3G1, Canada
Na Liu, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Inturu Omkaram, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Chulseung Jung, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Healin Im, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Seongin Hong, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Seung Min Kim, Institute of Advanced Composite Materials, Korea Institute of Science and Technology (KIST), Jeonbuk 565-905, Republic of Korea
Young Ki Hong, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea
Jaehyun Hur, Department of Chemical and Biological Engineering, Gachon University, Seongnam-si, Gyeonggi 13120, Republic of Korea
Youngki Yoon, Department of Electrical and Computer Engineering & Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, ON N2L 3G1, Canada
Sunkook Kim, Multi-Functional Nano/Bio Electronics Lab., Kyung Hee University, Gyeonggi 446-701, Republic of Korea

Keywords

transition metal dichalcogenides, MoSe2, chemical sensors, chemical vapor depositon

Abstract

ABSTRACT Layered semiconductors with atomic thicknesses are becoming increasingly important as active elements in high-performance electronic devices owing to their high carrier mobilities, large surface-to-volume ratios, and rapid electrical responses to their surrounding environments. Here, we report the first implementation of a highly sensitive chemical-vapor-deposition-grown multilayer MoSe2 field-effect transistor (FET) in a NO2 gas sensor. This sensor exhibited ultra-high sensitivity (S = ca. 1,907 for NO2 at 300 ppm), real-time response, and rapid on–off switching. The high sensitivity of our MoSe2 gas sensor is attributed to changes in the gap states near the valence band induced by the NO2 gas absorbed in the MoSe2, which leads to a significant increase in hole current in the off-state regime. Device modeling and quantum transport simulations revealed that the variation of gap states with NO2 concentration is the key mechanism in a MoSe2 FET-based NO2 gas sensor. This comprehensive study, which addresses material growth, device fabrication, characterization, and device simulations, not only indicates the utility of MoSe2 FETs for high-performance chemical sensors, but also establishes a fundamental understanding of how surface chemistry influences carrier transport in layered semiconductor devices.

Graphical Abstract

Publisher

Tsinghua University Press

Share

COinS