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Nano Research

Article Title

Realization of vertical and lateral van der Waals heterojunctions using two-dimensional layered organic semiconductors

Authors

Yuhan Zhang, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Zhongzhong Luo, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Fengrui Hu, School of Physics, Nanjing University, Nanjing 210093, China
Haiyan Nan, Department of Physics, Southeast University, Nanjing 211189, China
Xiaoyong Wang, School of Physics, Nanjing University, Nanjing 210093, China
Zhenhua Ni, Department of Physics, Southeast University, Nanjing 211189, China
Jianbin Xu, Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong, Hong Kong SAR, China National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Yi Shi, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
Xinran Wang, National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China

Keywords

two-dimensional, heterojunctions, organic semiconductor, van der Waals epitaxy

Abstract

ABSTRACT Van der Waals (vdW) heterojunctions based on two-dimensional (2D) atomic crystals have been extensively studied in recent years. Herein, we show that both vertical and lateral vdW heterojunctions can be realized with layered molecular crystals using a two-step physical vapor transport (PVT) process. Both types of heterojunctions show clean and sharp interfaces without phase mixing under atomic force microscopy (AFM). They also exhibit a strong interfacial built-in electric field similar to that of their inorganic counterparts. These heterojunctions have greater potential for device applications than individual materials. The lateral heterojunction (LHJ) devices show rectifying characteristics due to the asymmetric energy barrier for holes at the interface, while the vertical heterojunction (VHJ) devices behave like metal–insulator–semiconductor tunnel junctions, with pronounced negative differential conductance (NDC). Our work extends the concept of vdW heterojunctions to molecular materials, which can be generalized to other layered organic semiconductors (OSCs) to obtain new device functionalities.

Graphical Abstract

Publisher

Tsinghua University Press

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