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Nano Research

Article Title

Role of the carrier gas flow rate in monolayer MoS2 growth by modified chemical vapor deposition

Authors

Hengchang Liu, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Hi-Tech Park, Pudong, Shanghai 200120, China State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China University of Chinese Academy of Sciences, Beijing 100039, China ShanghaiTech University, 100 Haike Road, Pudong, Shanghai 201210, China
Yuanhu Zhu, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Qinglong Meng, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Xiaowei Lu, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Shuang Kong, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Zhiwei Huang, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Peng Jiang, State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China
Xinhe Bao, Shanghai Advanced Research Institute, Chinese Academy of Sciences, 99 Hi-Tech Park, Pudong, Shanghai 200120, China State Key Laboratory of Catalysis, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, 457 Zhongshan Road, Dalian 116023, China

Keywords

MoS2, monolayer, carrier gas flow rate, modified CVD

Abstract

ABSTRACT Monolayer molybdenum disulfide (MoS2) has attracted much attention because of the variety of potential applications. However, its controlled growth is still a great challenge. Here, we report a modified chemical vapor deposition method to grow monolayer MoS2. We observed that the quality of the MoS2 crystals could be greatly improved by tuning the carrier gas flow rate during the heating stage. This subtle modification prevents the uncontrollable reaction between the precursors, a critical factor for the growth of high-quality monolayer MoS2. Based on an optimized gas flow rate, the MoS2 coverage and flake size can be controlled by adjusting the growth time.

Graphical Abstract

Publisher

Tsinghua University Press

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