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Nano Research

Article Title

Highly uniform and nonlinear selection device based on trapezoidal band structure for high density nano-crossbar memory array

Authors

Qing Luo, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Xiaoxin Xu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Hangbing Lv, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 211800, China
Tiancheng Gong, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Shibing Long, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Qi Liu, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Ling Li, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China
Ming Li, Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China University of Chinese Academy of Sciences, Beijing 100049, China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing 211800, China

Keywords

crossbar array, selector, trapezoidal barrier, gradient oxygen concentration, high uniformity

Abstract

ABSTRACT Crossbar array provides a cost-effective approach for achieving high-density integration of two-terminal functional devices. However, the “sneaking current problem”, which can lead to read failure, is a severe challenge in crossbar arrays. To inhibit the sneaking current from unselected cells, the integration of individual selection devices is necessary. In this work, we report a novel TaO x-based selector exhibiting a trapezoidal band structure formed by tuning the concentration of defects in the oxide. Salient features such as a high current density (1 MA·cm–2), high selectivity (5 × 104), low off-state current (~10 pA), robust endurance (>1010), self-compliance, and excellent uniformity were successfully achieved. The integrated one-selector one-resistor (1S1R) device exhibits high nonlinearity in the low resistance state (LRS), which is quite effective in solving the sneaking current issue.

Graphical Abstract

Publisher

Tsinghua University Press

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