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Nano Research

Article Title

Simulation and structure optimization of triboelectric nanogenerators considering the effects of parasitic capacitance

Authors

Keren Dai, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
Xiaofeng Wang, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
Simiao Niu, School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA30332-0245, USA
Fang Yi, State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, Beijing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
Yajiang Yin, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China
Long Chen, Broadcom Ltd., 2901 Via Fortuna #400, Austin, TX, 78746, USA
Yue Zhang, State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, Beijing Municipal Key Laboratory of New Energy Materials and Technologies, University of Science and Technology Beijing, Beijing 100083, China
Zheng You, Collaborative Innovation Center for Micro/Nano Fabrication, Device and System, State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084, China

Keywords

triboelectric nanogenerator, parasitic capacitance, figure of merit, structure optimization, performance optimization

Abstract

ABSTRACT Parasitic capacitance is an unavoidable and usually unwanted capacitance that exists in electric circuits, and it is the most important second-order non-ideal effect that must be considered while designing a triboelectric nanogenerator (TENG) because its magnitude is comparable to the magnitude of the TENG capacitance. This paper investigates the structure and performance optimization of TENGs through modeling and simulation, taking the parasitic capacitance into account. Parasitic capacitance is generally found to cause severe performance degradation in TENGs, and its effects on the optimum matching resistance, maximum output power, and structural figures-of-merit (FOMs) of TENGs are thoroughly investigated and discussed. Optimum values of important structural parameters such as the gap and electrode length are determined for the different working modes of TENGs, systematically demonstrating how these optimum structural parameters change as functions of the parasitic capacitance. Additionally, it is demonstrated that the parasitic capacitance can improve the height tolerance of the metal freestanding-mode TENGs. This work provides a theoretical foundation for the structure and performance optimization of TENGs for practical applications and promotes the development of mechanical energy-harvesting techniques.

Graphical Abstract

Publisher

Tsinghua University Press

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