Article Title

High-performance heterogeneous complementary inverters based on n-channel MoS₂ and p-channel SWCNT transistors

Authors

Zhixin Li, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Dan Xie, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Ruixuan Dai, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Jianlong Xu, Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China
Yilin Sun, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Mengxing Sun, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Cheng Zhang, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China
Xian Li, Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China

Keywords

heterogeneous inverter, MoS2, single-walled carbon-nanotube (SWCNT), high voltage gain, electrical properties

Abstract

ABSTRACT Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS2) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin–Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios (W/L) of the MoS2-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.

Graphical Abstract

DOI

https://doi.org/10.1007/s12274-016-1286-4

Publisher

Tsinghua University Press

Recommended Citation

Zhixin Li,Dan Xie,Ruixuan Dai,Jianlong Xu,Yilin Sun,Mengxing Sun,Cheng Zhang,Xian Li, High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors. NanoRes.2017, 10(1): 276–283