"Computational model of edge effects in graphene nanoribbon transistors" by Pei Zhao, Mihir Choudhury et al.

Article Title

Computational model of edge effects in graphene nanoribbon transistors

Authors

Pei Zhao, Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA
Mihir Choudhury, Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
Kartik Mohanram, Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA
Jing Guo, Department of Electrical and Computer Engineering, University of Florida, Gainesville, FL 32611, USA

Keywords

Graphene nanoribbon field-effect transistor, edge bond relaxation, third nearest neighbor interaction, edge scattering

Abstract

We present a semi-analytical model incorporating the effects of edge bond relaxation, the third nearest neighbor interactions, and edge scattering in graphene nanoribbon fi eld-effect transistors (GNRFETs) with armchair-edge GNR (AGNR) channels. Unlike carbon nanotubes (CNTs) which do not have edges, the existence of edges in the AGNRs has a signifi cant effect on the quantum capacitance and ballistic I V characteristics of GNRFETs. For an AGNR with an index of m=3p, the band gap decreases and the ON current increases whereas for an AGNR with an index of m=3p+1, the quantum capacitance increases and the ON current decreases. The effect of edge scattering, which reduces the ON current, is also included in the model.