"Vertical nanowire array-based light emitting diodes" by Elaine Lai, Woong Kim et al.

Article Title

Vertical nanowire array-based light emitting diodes

Authors

Elaine Lai, Department of Chemistry, University of California, Berkeley, CA 94720, USAMolecular Foundry, Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Woong Kim, Department of Chemistry, University of California, Berkeley, CA 94720, USAMolecular Foundry, Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA
Peidong Yang, Department of Chemistry, University of California, Berkeley, CA 94720, USAMolecular Foundry, Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA

Keywords

ZnO nanowire, electroluminescence, LED, waveguiding

Abstract

Electroluminescence from a nanowire array-based light emitting diode is reported. The junction consists of a p-type GaN thin fi lm grown by metal organic chemical vapor deposition (MOCVD) and a vertical n-type ZnO nanowire array grown epitaxially from the thin fi lm through a simple low temperature solution method. The fabricated devices exhibit diode like current voltage behavior. Electroluminescence is visible to the human eye at a forward bias of 10 V and spectroscopy reveals that emission is dominated by acceptor to band transitions in the p-GaN thin fi lm. It is suggested that the vertical nanowire architecture of the device leads to waveguided emission from the thin fi lm through the nanowire array.