laser chemical vapor deposition (LCVD), TiO2-rich Ba–Ti–O film, microstructure, deposition temperature, dielectric properties
TiO2-rich Ba–Ti–O films were prepared on Pt/Ti/SiO2/Si substrate by laser chemical vapor deposition (LCVD). Their phase relationship and microstructure were investigated. The single-phase BaTi2O5, Ba4Ti13O30 and BaTi5O11 films were prepared at Ti/Ba molar ratios mTi/Ba = 1.84–1.90, 2.83 and 4.49–4.55, respectively. The high deposition rate of TiO2-rich Ba–Ti–O films ranged from 54.0 µm/h to 177.6 µm/h. The permittivity of BaTi2O5 film (prepared at mTi/Ba = 1.84 and deposition temperature Tdep = 877 K), Ba4Ti13O30 film (prepared at mTi/Ba = 2.83 and Tdep = 914 K) and BaTi5O11 film (prepared at mTi/Ba = 4.49 and Tdep = 955 K) were 50, 40 and 21, respectively.
Tsinghua University Press
Dongyun GUO, Akihiko ITO, Takashi GOTO et al. Preparation of TiO2-rich Ba–Ti–O thick films by laser chemical vapor deposition method. Journal of Advanced Ceramics 2013, 2(2): 167-172.