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Journal of Advanced Ceramics

Authors

Zhonghai YU, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xiuxia WANG, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Chengyan LIU, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Yiran CHENG, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Zhongwei ZHANG, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Ruifan SI, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xiaobo BAI, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xiaokai HU, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Jie GAO, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Ying PENG, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Lei MIAO, Guangxi Key Laboratory of Information Materials, Electronical Information Materials and Devices Engineering Research Center of Ministry of Education, School of Materials Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China

Keywords

Ag8SnSe6, thermoelectric (TE) performance, lattice thermal conductivity, SnBr2 introduction, hydrothermal method

Abstract

The argyrodite compounds (A(12−n)/mm+Bn+X62−(Am+ = Li+, Cu+, and Ag+; Bn+ = Ga3+, Si4+, Ge4+, Sn4+, P5+, and As5+; and X2-= S2-, Se2-, or Te2-)) have attracted great attention as excellent thermoelectric (TE) materials due to their extremely low lattice thermal conductivity (κl). Among them, Ag8SnSe6-based TE materials have high potential for TE applications. However, the pristine Ag8SnSe6 materials have low carrier concentration (< 1017 cm-3), resulting in low power factors. In this study, a hydrothermal method was used to synthesize Ag8SnSe6 with high purity, and the introduction of SnBr2 into the pristine Ag8SnSe6 powders has been used to simultaneously increase the power factor and decrease the thermal conductivity (κ). On the one hand, a portion of the Br- ions acted as electrons to increase the carrier concentration, increasing the power factor to a value of ~698 μW·m-1·K-2 at 736 K. On the other hand, some of the dislocations and nanoprecipitates (SnBr2) were generated, resulting in a decrease of κl (~0.13 W·m-1·K-1) at 578 K. As a result, the zT value reaches ~1.42 at 735 K for the sample Ag8Sn1.03Se5.94Br0.06, nearly 30% enhancement in contrast with that of the pristine sample (~1.09). The strategy of synergistic manipulation of carrier concentration and microstructure by introducing halogen compounds could be applied to the argyrodite compounds to improve the TE properties.

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