Authors
Xiuyuan FAN, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
Guohua BAI, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China;Institute of Advanced Magnetic Materials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China
Zhenhua ZHANG, Institute of Advanced Magnetic Materials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China
Qiming CHEN, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
Jiaying JIN, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
Jiafeng XU, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China
Xuefeng ZHANG, Institute of Advanced Magnetic Materials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China
Mi YAN, School of Materials Science and Engineering, State Key Laboratory of Silicon Materials, Key Laboratory of Novel Materials for Information Technology of Zhejiang Province, Zhejiang University, Hangzhou 310027, China;Institute of Advanced Magnetic Materials, College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310012, China
Keywords
NiCuZn ferrite, megahertz application, grain boundary, Bi2Fe4O9, ion doping
Abstract
High-frequency soft magnetic ferrite ceramics are desired in miniaturized and efficient power electronics but remain extremely challenging to deploy on account of the power loss (Pcv) at megahertz frequencies. Here, we prepared NiCuZn ferrite with superior high-frequency properties by V2O5 and Bi2O3 synergistic doping, which proves to be a potent pathway to reduce Pcv of the ferrite at megahertz frequencies. The sample doped with 800 ppm V2O5 and 800 ppm Bi2O3 yielded the most optimized magnetic properties with a Pcv of 113 kW/m3 (10 MHz, 5 mT, 25 ℃), an initial permeability (μi) of 89, and a saturation induction (Bs) of 340 mT, which is at the forefront of the reported results. These outstanding properties are closely related to the notable grain boundary structure, which features a new type of nano-Bi2Fe4O9 phase around ferrite grains and a Ca/Si/V/O amorphous layer. Our results indicate great strides in correlating the grain boundary structure with multiple-ion doping and set the scene for the developing high-frequency soft magnet ferrites.
Recommended Citation
FAN, Xiuyuan; BAI, Guohua; ZHANG, Zhenhua; CHEN, Qiming; JIN, Jiaying; XU, Jiafeng; ZHANG, Xuefeng; and YAN, Mi
(2022)
"Synergistic effect of V2O5 and Bi2O3 on the grain boundary structure of high-frequency NiCuZn ferrite ceramics,"
Journal of Advanced Ceramics: Vol. 11:
Iss.
6, Article 7.
DOI: https://doi.org/10.1007/s40145-022-0585-3
Available at:
https://dc.tsinghuajournals.com/journal-of-advanced-ceramics/vol11/iss6/7
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