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Journal of Advanced Ceramics

Article Title

Vector analysis of electric-field-induced antiparallel magnetic domain evolution in ferromagnetic/ferroelectric heterostructures

Authors

Xinger ZHAO, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Zhongqiang HU, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Jingen WU, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Ting FANG, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Yaojin LI, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Yuxin CHENG, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Yifan ZHAO, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Mengmeng GUAN, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Dan XIAN, Collaborative Innovation Center of High-End Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710049, China;International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China
Chenying WANG, Collaborative Innovation Center of High-End Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710049, China;International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China
Qi MAO, Collaborative Innovation Center of High-End Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710049, China;International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China
Bin PENG, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Ren-Ci PENG, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Ziyao ZHOU, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Zhiguang WANG, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China
Zhuang-De JIANG, Collaborative Innovation Center of High-End Manufacturing Equipment, Xi’an Jiaotong University, Xi’an 710049, China;International Joint Laboratory for Micro/Nano Manufacturing and Measurement Technology, Xi’an Jiaotong University, Xi’an 710049, China
Ming LIU, Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, School of Electronic Science and Engineering, State Key Laboratory for Mechanical Behavior of Materials, Xi’an Jiaotong University, Xi’an 710049, China

Keywords

multiferroics, magnetoelectric effect, magnetic domains, magneto-optical Kerr effect (MOKE)

Abstract

Electric field (E-field) control of magnetism based on magnetoelectric coupling is one of the promising approaches for manipulating the magnetization with low power consumption. The evolution of magnetic domains under in-situ E-fields is significant for the practical applications in integrated micro/nano devices. Here, we report the vector analysis of the E-field-driven antiparallel magnetic domain evolution in FeCoSiB/PMN-PT(011) multiferroic heterostructures via in-situ quantitative magneto-optical Kerr microscope. It is demonstrated that the magnetic domains can be switched to both the 0° and 180° easy directions at the same time by E-fields, resulting in antiparallel magnetization distribution in ferromagnetic/ferroelectric heterostructures. This antiparallel magnetic domain evolution is attributed to energy minimization with the uniaxial strains by E-fields which can induce the rotation of domains no more than 90°. Moreover, domains can be driven along only one or both easy axis directions by reasonably selecting the initial magnetic domain distribution. The vector analysis of magnetic domain evolution can provide visual insights into the strain-mediated magnetoelectric effect, and promote the fundamental understanding of electrical regulation of magnetism.

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