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Journal of Advanced Ceramics

Article Title

Photocurrent density and electrical properties of Bi

Authors

Mingqiang ZHONG, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Qin FENG, School of Resources, Environment and Materials, Guangxi University, Nanning 530004, China
Changlai YUAN, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Xiao LIU, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Baohua ZHU, College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Liufang MENG, College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Changrong ZHOU, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Jiwen XU, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Jiang WANG, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China
Guanghui RAO, Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin 541004, China;College of Material Science and Engineering, Guilin University of Electronic Technology, Guilin 541004, China;Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Keywords

Bi, ferroelectric semiconductors, optical band gap, photovoltaic effect, impedance spectroscopy

Abstract

In this work, the (1-x)Bi0.5Na0.5TiO3-xBaNi0.5Nb0.5O3 (BNT-BNN; 0.00 ≤ x ≤ 0.20) ceramics were prepared via a high-temperature solid-state method. The crystalline structures, photovoltaic effect, and electrical properties of the ceramics were investigated. According to X-ray diffraction, the system shows a single perovskite structure. The samples show the normal ferroelectric loops. With the increase of BNN content, the remnant polarization (Pr) and coercive field (Ec) decrease gradually. The optical band gap of the samples narrows from 3.10 to 2.27 eV. The conductive species of grains and grain boundaries in the ceramics are ascribed to the double ionized oxygen vacancies. The open-circuit voltage (Voc) of ~15.7 V and short-circuit current (Jsc) of ~1450 nA/cm2 are obtained in the 0.95BNT-0.05BNN ceramic under 1 sun illumination (AM1.5G, 100 mW/cm2). A larger Voc of 23 V and a higher Jsc of 5500 nA/cm2 are achieved at the poling field of 60 kV/cm under the same light conditions. The study shows this system has great application prospects in the photovoltaic field.

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